PN Junction Semiconductor's product on display. [Photo/Yongpai app]

Ningbo-based PN Junction Semiconductor has unveiled a copper-interconnect packaging process for silicon carbide (SiC) power devices, targeting applications including new-energy vehicles, AI computing, and energy storage.

Founded in 2018, the company has developed over 100 power-device products. Its SiC MOSFETs are already used by Chinese automakers and Tier 1 suppliers, with applications spanning data centers, 5G base stations, energy storage, and EV charging.

The company's latest technology uses thick copper metallization on the top surface of 8-inch SiC wafers, replacing the conventional aluminum interconnect structure. PN Junction Semiconductor says the approach raises current density from about 400 amperes per square centimeter to more than 600 A/sq cm, while reducing parasitic inductance to below 2 nanohenries and switching losses by about 40 percent.

The company is also developing embedded PCB power modules that can integrate SiC chips directly into multilayer circuit boards. The approach is designed to shorten electrical paths, improve heat dissipation, and enable more compact power systems.

PN Junction Semiconductor expects sales of its AI-related products to reach 300 million to 400 million yuan ($44 million to $59 million) by 2027, representing more than 100-fold growth from current levels.

Founder Huang Xing said the company will continue to develop advanced packaging technologies and strengthen collaboration across the SiC supply chain, from wafer manufacturing to power modules and end applications.